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JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -5 -3 -4.5 10 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB1065 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -50 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=-50|I IE=-50|I A ,IE=0 A ,IC=0 -60 V Emitter-base breakdown voltage -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 |I A IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 |I A hFE COB DC current gain IC=-0.5A ; VCE=-3V IE=0 ; VCB=-10V,f=1MHz 56 390 Output capacitance 50 pF fT Transition frequency IC=-0.5A ; VCE=-5V 70 MHz hFE Classifications N 56-120 P 82-180 Q 120-270 R 180-390 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1065 Fig.2 Outline dimensions 3 |
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